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LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
LED ARRAY
Pb
Lead-Free Parts
LA158B/VG.VYVG.DBK-PF
DATA SHEET
DOC. NO : REV. DATE : :
QW0905-LA158B/VG.VYVG.DBK-PF A 03 - Oct - 2005
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LA158B/VG.VYVG.DBK-PF Page 1/7
Package Dimensions
5.08 1.5O 0.3 12.85
VG
3.3
VYVG
10.16
3.3 1.78
DBK
3.2O 0.5
1/4
6.9O 0.5 9.44O 0.5 11.98O 0.5
0.5 TYP
2.54TYP
12
VG,DBK
VG 1 VY 2
1 +
2 -
Package Dimensions
2.4 3.5 1.8 2.6 1.5MAX 4.0 1.5MAX 3.3 1.8 1.6 3.0 2.4
1/4
0.5 TYP
25.0MIN
1/4
0.5 TYP
25.0MIN
VG VY
VG,DBK 1.0MIN 2.54TYP 12 1 + 2 1.0MIN 2.54TYP 1 2
1
2
LVG21541-PF LDBK21541-PF
LVYVG11263/R1-PF
Note : 1.All dimension are in millimeter tolerance is O 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LA158B/VG.VYVG.DBK-PF Page 2/7
Absolute Maximum Ratings at Ta=25 J
Ratings Parameter Symbol VG Forward Current Peak Forward Current Duty 1/10@10KHz Power Dissipation Reverse Current @5V Electrostatic Discharge Operating Temperature Storage Temperature Soldering Temperature IF IFP PD Ir ESD Topr Tstg Tsol 30 120 100 10 2000 -20 ~ +80 -30 ~ +100 Max 260J for 5 sec Max (2mm from body) VY 30 60 75 10 DBK 30 100 120 50 150 mA mA mW UNIT
g A V
J
Typical Electrical & Optical Characteristics (Ta=25 J )
Peak Dominant Spectral wave wave halfwidth length length f nm f Pnm f Dnm
PART NO
MATERIAL
COLOR
Emitted
Forward voltage @20mA(V)
Viewing Luminous angle intensity @20mA(mcd) 2c 1/2 (deg)
Lens
Green Transparent
Min. Typ. Max. Min. Typ. 565 ------590 ---470 30 20 30 30 1.7 1.7 1.7 ---- 2.6 ---- 2.6 ---- 2.6 90 9.0 3.0 160 12 6.5 300 20 20 20 10
GaP AlGaInP
LA158B/VG.VYVG.DBK-PF
Green Amber
Water Clear
GaP
Green
Blue Transparent
565 ----
InGaN/GaN Blue
---- 3.5
4.0 160
Note : 1.The forward voltage data did not including O 0.1V testing tolerance. 2. The luminous intensity data did not including O 15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LA158B/VG.VYVG.DBK-PF Page 3/7
Typical Electro-Optical Characteristics Current
VG CHIP
Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current
1000
3.5
Forward Current(mA)
100
Relative Intensity Normalize @20mA
1.0 2.0 3.0 4.0 5.0
3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000
10 1.0
0.1
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA Normalize @25J
-40 -20 0 20 40 60 80 100
Forward Voltage@20mA Normalize @25J
1.2
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100
1.1 1.0
0.9 0.8
Ambient Temperature(J )
Ambient Temperature(J )
Fig.5 Relative Intensity vs. Wavelength
Relative Intensity@20mA
1.0
0.5
0.0 500 550 600 650
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LA158B/VG.VYVG.DBK-PF Page 4/7
Typical Electro-Optical Characteristics Curve
VY CHIP
Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current
1000
3.0
Forward Current(mA)
100 10
Relative Intensity Normalize @20mA
1.5 2.0 2.5 3.0
2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000
1.0 0.1 1.0
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
1.2
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
3.0
Relative Intensity@20mA Normalize @25J
-40 -20 0 20 40 60 80 100
Forward Voltage@20mA Normalize @25J
1.1
2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100
1.0
0.9
0.8
Ambient Temperature(J )
Ambient Temperature(J )
Fig.5 Relative Intensity vs. Wavelength
1.0
Relative Intensity@20mA
0.5
0.0 500 550 600 650
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LA158B/VG.VYVG.DBK-PF Page 5/7
Typical Electro-Optical Characteristics Curve
DBK CHIP
Fig.1 Forward current vs. Forward Voltage
1000
Fig.2 Relative Intensity vs. Forward Current
3.0
Forward Current(mA)
100 10 1.0
Relative Intensity Normalize @20mA
1.0 2.0 3.0 4.0 5.0
2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000
0.1
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
1.2
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
3.0
Forward Voltage@20mA Normalize @25J
Relative Intensity@20mA Normalize @25J
100
2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100
1.1
1.0
0.9 0.8 -40 -20 0 20 40 60 80
Ambient Temperature(J )
Ambient Temperature(J )
Fig.5 Relative Intensity vs. Wavelength
1.0
Relative Intensity@20mA
0.5
0.0 400 450 500 550
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LA158B/VG.VYVG.DBK-PF Page 6/7
Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350 C Max Soldering Time:3 Seconds Max(One Time) Distance:2mm Min(From solder joint to body)
2.Wave Soldering Profile Dip Soldering Preheat: 120 C Max Preheat time: 60seconds Max Ramp-up 2 C/sec(max) Ramp-Down:-5 C/sec(max) Solder Bath:260 C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to body)
Temp(C) 260 C3sec Max
260X
5 /sec max
120X
2 /sec max Preheat 60 Seconds Max
25X 0X0
50
100
150
Time(sec)
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LA158B/VG.VYVG.DBK-PF Page 7/7
Reliability Test:
Test Item
Test Condition
1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs)
Description
This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed.
Reference Standard
MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1
Operating Life Test
High Temperature Storage Test
1.Ta=105 JO 5J 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours.
MIL-STD-883:1008 JIS C 7021: B-10
Low Temperature Storage Test
1.Ta=-40 JO 5J 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under condition of low temperature for hours.
JIS C 7021: B-12
High Temperature High Humidity Test
1.Ta=65JO 5J 2.RH=90 %~95% 3.t=240hrs O 2hrs
The purpose of this test is the resistance of the device under tropical for hous.
MIL-STD-202:103B JIS C 7021: B-11
Thermal Shock Test
1.Ta=105 JO 5J &-40JO (10min) (10min) 2.total 10 cycles
5J
The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire.
MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011
Solder Resistance Test
1.T.Sol=260 JO 5J 2.Dwell time= 10 O 1sec.
MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1
Solderability Test
1.T.Sol=230 JO 5J 2.Dwell time=5 O 1sec
This test intended to see soldering well performed or not.
MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2

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